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mmwave transmi tt er - sm t 1 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz functional diagram features s upport for ieee channel plan eir p: 23.5 dbm output power: 16 dbm a ntenna gain: 7.5 dbi m ax gain: 38 db gain control r ange: 17 db i ntegrated frequency s ynthesizer i ntegrated i mage r eject filter programmable i f gain block universal a nalog i /q baseband i nterface three-wire s erial digital i nterface 7x11mm qf n package: 77mm 2 t ypical a pplications the h m c6000lp711 e is ideal for: ? wigig s ingle carrier m odulations ? 60 ghz ism band data transmitter ? m ulti-gbps data communications ? high defnition v ideo transmission ? r fi d general description the h m c6000lp711 e is a complete mmwave transmitter i c and low profle antenna integrated in a plastic 7x11 mm surface mount package. the transmitter provides 23.5 dbm of eir p operating over 57 - 64 ghz with 1.8 ghz of modulation bandwidth. a n integrated synthesizer provides tuning in 500 or 540 m hz step sizes depending on the choice of external reference clock. s upport for a wide variety of modulation formats is provided through a universal analog baseband i q interface. together with the h m c6001lp711 e , a complete transmit/receive chipset is provided for multi-gbps operation in the unlicensed 60 ghz ism band. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 2 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 1. e lectrical s pecifcations, ta = +25 c, s ee t est conditions parameter condition m in. typ. m ax. units frequency r ange 57 64 ghz frequency s tep s ize 308.5714 m hz r ef clk 0.54 ghz frequency s tep s ize 285.714 m hz r ef clk 0.50 ghz m odulation bandwidth 3db bw, double-sided 1.8 ghz m ax gain pout measured at i c, minus total pin of all 4 baseband inputs [1] 38 db gain control r ange 17 db gain s tep s ize 1.3 db eir p [2] combined psat and antenna peak gain measured on evaluation board 23.5 dbm p 1db pout measured at i c [1] 11 dbm p sat pout measured at i c [1] 16 dbm a ntenna gain a ntenna measured on evaluation board 7. 5 dbi i mage r ejection 34 db s ideband s uppression 20 db carrier s uppression 20 db 3xlo s uppression 32 dbc phase n oise @ 100 khz -72 dbc/hz phase n oise @ 1 m hz -86 dbc/hz phase n oise @ 10 m hz -111 dbc/hz phase n oise @ 100 m hz -125 dbc/hz phase n oise @ 1 ghz -127 dbc/hz pll loop bw i nternal loop fflter 200 khz power dissipation 0.8 w [1] m easurement does not include antenna gain. [2] e ffective i sotropic r adiated power ( eir p) t able 2. t est conditions r eference frequency 308.5714 m hz temperature +25c gain s etting m ax i nput s ignal level -31 dbm @ each of the 4 baseband inputs i f bandwidth m ax i nput i mpedance 100 differential output i mpedance 100 differential for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 3 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 3. r ecommended operation conditions description s ymbol m in typical m ax units a nalog ground g nd 0 v dc power s upplies v cc_ p a1 v cc_p a 2 3.9 4.0 4.1 v dc v dd_p a v cc_d rv v cc_t ri p v cc_d iv v cc_ re g v cc_ i f v cc_ mi x 2.565 2.7 2.835 v dc v dd_pll 1.3 1.35 1.48 v dc v ddd i nput v oltage r anges s erial digital i nterface C logic high d a ta ena bl e clock rese t 0.9 1.2 1.4 v s erial digital i nterface C logic low d a ta ena bl e clock rese t -0.05 0.1 0.3 v r eference clock re fclkp re fclk m 3.3 or 2.5 v lv p e cl /l v d s 1.2 v c m o s v baseband i and q [1][2] bb_ im bb_ i p bb_q m bb_qp 5 25 100 mv p-p baseband i and q common mode 1.6 v ms k data [2] f mm _ i f m p_ i f mm _q f m p_q 200 500 750 mv p-p ms k common mode 1.1 v i nput r esistance d a ta ena bl e clock rese t >50 kohms re fclkp / m 50 ohm temperature -40 +85 c [1] v alues above 25 m v p-p are to be used only with i f attenuation to keep the pout below 16 dbm [2] baseband voltage at each of the four baseband inputs. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 4 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 4. power consumption v oltage typical current (m a ) typical power consumption (watts) v cc_ p a 1 (4.0 v dc) 33 0.27 v cc_p a 2 (4.0 v dc) 33 v cc_ re g (2.7 v dc) 12 0.53 v cc_d rv 1 (2.7 v dc) 16 v cc_d rv 2 (2.7 v dc) 16 v cc_ mi x (2.7 v dc) 29 v cc_ i f (2.7 v dc) 31 v cc_t ri p (2.7 v dc) 48 v cc_d iv (2.7 v dc) 35 v dd_p a (2.7 v dc) 6 v ddd (1.35 v dc) <1 0.01 v dd_pll (1.35 v dc) 8 figure 1. eir p vs. frequency at maximum gain [1][2] figure 2. a ntenna peak gain vs. frequency [2] figure 3. a ntenna gain vs. e -plane a ngle [2] figure 4. a ntenna gain vs. h-plane a ngle [2] 0 2 4 6 8 10 12 14 16 18 20 22 24 57.2 58.3 59.4 60.4 61.5 62.6 63.7 pin = -40 dbm pin = -31 dbm pin = -22 dbm eirp (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 57.2 58.3 59.4 60.4 61.5 62.6 63.7 gain (dbi) frequency (ghz) [1] e ffective i sotropic r adiated power ( eir p) with input power of -40, -31, and -22dbm applied at each of the 4 baseband inputs, calculated at peak antenna gain. [2] a ntenna patterns and gain are measured on packages mounted on the e valuation pcb daughtercard (see p. 10). -20 -15 -10 -5 0 5 10 0 30 60 90 120 210 240 270 300 330 60ghz cos^2 gain (dbi) -20 -15 -10 -5 0 5 10 0 30 60 90 120 210 240 270 300 330 60ghz cos^2 gain (dbi) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 5 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz figure 5. output power vs. frequency at maximum gain [3][4] figure 6. p1db vs. frequency over t emperature [4] figure 7. p1db vs. frequency a cross v oltage [4] figure 8. 58.32 ghz ( ieee ch-1) output power vs. i f gain s etting [3][4] figure 9. 60.48 ghz ( ieee ch-2) output power vs. i f gain s etting [3][4] figure 10. 62.64 ghz ( ieee ch-3) output power vs. i f gain s etting [3][4] [3] i nput power of -40, -31, and -22dbm applied at each of the 4 baseband inputs. [4] m easured without antenna gain. -16 -12 -8 -4 0 4 8 12 16 20 012345678910111213 pin = -40dbm pin = -31dbm pin = -22dbm output power (dbm) if attenuator setting 0 2 4 6 8 10 12 14 16 18 20 57.2 58.3 59.4 60.4 61.5 62.6 63.7 pin = -40 dbm pin = -31 dbm pin = -22 dbm output power (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 57.2 58.3 59.4 60.4 61.5 62.6 63.7 min bias typical bias max bias p1db (dbm) frequency (ghz) -16 -12 -8 -4 0 4 8 12 16 20 012345678910111213 pin=-40dbm pin=-31dbm pin=-22dbm output power (dbm) if attenuator setting -16 -12 -8 -4 0 4 8 12 16 20 012345678910111213 pin=-40dbm pin=-31dbm pin=-22dbm output power (dbm) if attenuator setting 0 2 4 6 8 10 12 14 16 18 57.2 58.3 59.4 60.4 61.5 62.6 63.7 +25c +85c -40c p1db (dbm) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 6 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz figure 11. gain vs. frequency over t emperature [4][5] figure 12. s ideband s uppression vs. frequency over t emperature [6][7][8] figure 13. s ideband s uppression vs. frequency a cross v oltage [6][7][8] figure 14. i mage r ejection vs. frequency over t emperature [6][8] figure 15. i mage r ejection vs. frequency a cross i f gain [8] figure 16. carrier s uppression vs. frequency over t emperature [6][8] [4] m easured without antenna gain. [5] i nput power of -40dbm applied at each of the 4 baseband inputs, gain=pout at the i c, minus total pin of all 4 baseband inputs. [6] s pecifed at max gain settings. [7] s pecifed at sideband offset = 100 m hz. [8] i nput power of -31dbm applied at each of the 4 baseband inputs. 0 5 10 15 20 25 30 57.2 58.3 59.4 60.5 61.6 62.6 63.7 min. bias typical bias max. bias sideband suppression (dbc) frequency (ghz) 0 5 10 15 20 25 30 35 40 57.2 58.3 59.4 60.4 61.5 62.6 63.7 if attn = 0db if attn = 5db if attn = 10db if attn = 15db image suppression (dbc) frequency (ghz) 0 5 10 15 20 25 30 35 40 45 50 57.2 58.3 59.4 60.4 61.5 62.6 63.7 +25c +85c -40c gain (db) frequency (ghz) 0 5 10 15 20 25 30 57.2 58.3 59.4 60.5 61.6 62.6 63.7 +25c +85c -40c sideband suppression (dbc) frequency (ghz) 0 5 10 15 20 25 30 35 40 45 57.2 58.3 59.4 60.4 61.5 62.6 63.7 +25c +85c -40c image suppression (dbc) frequency (ghz) 0 5 10 15 20 25 30 35 40 57.2 58.3 59.4 60.5 61.6 62.6 63.7 +25c +85c -40c carrier suppression (dbc) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 7 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz figure 17. 3x l o s uppression vs. frequency over t emperature [6][9] figure 18. 3x l o s uppression vs. frequency a cross i f gain [8] figure 19. 2x l o vs. frequency a cross i f gain [8] figure 20. phase n oise vs. frequency offset over t emperature [10] figure 21. phase n oise vs. frequency offset over v oltage [10] [6] s pecifed at max gain settings. [8] i nput power of -31dbm applied at each of the 4 baseband inputs. [9] i nput power applied at each of the 4 baseband inputs: -22dbm (+25c), -31dbm (+85c), -40dbm (-40c). [10] m easured with a 60.48 ghz carrier. 0 5 10 15 20 25 30 35 40 45 50 57.2 58.3 59.4 60.4 61.5 62.6 63.7 if attn = 0db if attn = 5db if attn =10db if attn = 15db 3xlo suppression (dbc) frequency (ghz) 0 5 10 15 20 25 30 35 40 45 50 55 60 57.2 58.3 59.4 60.4 61.5 62.6 63.7 if attn = 0db if attn = 5db if attn =10db if attn = 15db 2xlo suppression (dbc) frequency (ghz) -130 -125 -120 -115 -110 -105 -100 -95 -90 -85 -80 -75 -70 -65 -60 10 3 10 4 10 5 10 6 10 7 10 8 10 9 min. bias typical bias max. bias phase noise (dbc/hz) frequency (hz) 0 5 10 15 20 25 30 35 40 45 50 55 60 57.2 58.3 59.4 60.4 61.5 62.6 63.7 +25c +85c -40c 3xlo suppression (dbc) frequency (ghz) -135 -130 -125 -120 -115 -110 -105 -100 -95 -90 -85 -80 -75 -70 -65 -60 10 3 10 4 10 5 10 6 10 7 10 8 10 9 +25c +85c -40c phase noise (dbc/hz) frequency (hz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 8 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 5. a bsolute maximum r atings v cc_p a = 4 v 4.2 v dc v dd = 2.7 v 2.85 v dc v cc = 2.7 v 2.85 v dc v dd_pll = 1.35 v 1.6 v dc v ddd = 1.35 v 1.6 v dc g nd 0 50 m v junction temperature 125c continuous pdiss (t=85c) (derate 29mw/c above 85c) 1.10 w thermal r esistance ( r th) (junction to ground paddle) 34 c/w s erial digital i nterface i nput v oltage 1.5 v dc r ef clk i nput ( a c coupled)(each) 0.75 v p-p baseband i nputs (bb, f m )(each) 0.75 v p-p s torage temperature -55c to 150c operating temperature -40c to 85c es d s ensitivity (hb m ) class 0, pass at 200 v outline drawing t able 6. package i nformation part n umber package body m aterial lead finish ms l r ating package m arking h m c6000lp711 e r oh s -compliant low s tress i njection m olded plastic s ilica and s ilicon 100% matte s n ms l3 h600 0 xxxx [1] 4-digit lot number xxxx n ot es : 1. a ll d imensi o ns are in in ch es [ mm ] 2. l ea d s p a c in g tol eran c e is n o n -cu m ul a t ive . 3. p a d bu rr l en ght s h a ll b e 0.15 mm ma x. p a d bu rr h ei ght s h a ll b e 0.05 mm ma x. 4. p a ck a g e w ar p s h a ll n ot e xc ee d 0.05 mm 5. a ll g r ou n d l ea d s an d g r ou n d p a ddl e m u s t b e s old ere d to pcb r f g r ou n d 6. re f er to h i tt i t e a ppl i c a t i o n n ot e fo r s ugg es t e d pcb l an d p a tt ern .. s tresses above those listed under a bsolute m aximum r atings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specifcation is not implied. e xposure to absolute maximum rating conditions for extended periods may affect device reliability. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 9 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 7. pin descriptions pin n umber function description 1 f mm _ i fs k negative in-phase input C dc coupled - 50 2 f m p_ i fs k positive in-phase input C dc coupled - 50 3,8-10 nc these pins are not connected internally 4 v dd_pll 1.35 v supply ( v co) 5 re fclk m xtal re f clk m inus - a c or dc coupled - 50 6 re fclkp xtal re f clk plus - a c or dc coupled - 50 7 v cc_ re g 2.7 v supply ( v co) 11 v cc_d iv 2.7 v supply (divider) 12 v cc_t ri p 2.7 v supply (tripler) 13 rese t a synchronous reset-all registers (1.2 v c m o s , active high) 14 ena bl e s erial digital interface enable (1.2 v c m o s ) - 50k 15 v ddd 1.35 v supply (serial digital interface) 16 clock s erial digital interface clock (1.2 v c m o s ) - 50k 17 d a ta s erial digital interface data (1.2 v c m o s ) - 50k 18 s c an out s erial digital interface out (1.2 v c m o s ) - 50k 19 v cc_d rv 1 2.7 v supply (driver) 20 v dd_p a 2.7 v supply (p a ) 21 v cc_ p a1 4.0 v supply (p a ) 22-50 g nd these pins and package bottom must be connected to r f/dc ground externally. 51 v cc_p a 2 4.0 v supply (p a ) 52 v cc_d rv 2 2.7 v supply (driver) 53 v cc_ mi x 2.7 v ( m ixer) 54 bb_q m baseband negative quadrature input C dc coupled - 50 55 bb_qp baseband positive quadrature input C dc coupled - 50 56 v cc_ i f 2.7 v supply ( i f) 57 bb_ im baseband negative in-phase input C dc coupled - 50 58 bb_ i p baseband positive in-phase input C dc coupled - 50 59 f mm _q fs k negative quadrature input C dc coupled - 50 60 f m p_q fs k positive quadrature input C dc coupled - 50 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 10 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz the circuit board used in the application should use r f circuit design techniques. s ignal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is part of an evaluation kit available from hittite. e valuation pcb daughtercard a ntenna-in-package l ocation and polarization the antenna is located inside the package with geometric center and linear polarization angle as shown. the geometric center can be used as the antenna pattern phase center provided there is sufficient unobstructed ground plane extension around the chip. m easured antenna pattern phase centers will vary with frequecy and are dependent on fnite ground plane effects, and coupling to nearby components. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 11 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz i tem contents part n umber e valuation kit 2 daughtercard e valuation pcbs with h m c6000lp711 e and h m c6001lp711 e 2 m otherboard e valuation pcbs with crystals, u s b i nterface, supply regulators and m cx connectorized i q interface. 2 wall mount power supplies. 2 u s b a m ale to u s b b female cable 8 phase matched m cx to sma cables cd r o m (contains user m anual, e valuation pcb s chematic, e valuation s oftware) h m c6450 e valuation kit order i nformation e valuation pcb s chematics to view the e valuation pcb s chematics please visit www.hittite.com and choose h m c6000lp711 e from the s earch by part n umber pull down menu to view the product splash page. e valuation kit the h m c6450 evaluation kit contains everything that is needed to set up a bi-directional 60 ghz millimeter-wave link using standard r f cable interfaces for baseband input and output. kit comes with two motherboard pcbs that provide on board crystals, u s b interface, supply regulators, and sma cables for connectorized i q interfaces. s upplied software allows the user to read from and write to all chip level registers using a graphical user i nterface (gu i ) or upload previously saved register settings. e valuation pcb motherboard for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 12 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t heory of operation a n integrated frequency synthesizer creates a low-phase noise lo between 16.3 and 18.3 ghz. the step size of the synthesizer equates to 540 m hz steps at r f when used with 308.5714 m hz reference crystal (compatible with the ieee channels of the ism band) or 500 m hz steps if used with a 285.714 m hz reference crystal. i f the chip is confgured for i q baseband input, these signals are quatrature modulated onto an 8 to 9.1ghz sliding i f using the synthesized lo divided by two. there are also options to input am /f m /f s k/ ms k waveforms directly to the on-chip i f modulators. contact hittite application support for further guidance and application notes if interested in these modes. the i f signal is then fltered and amplifed with 17 db of variable gain, then mixed with three times the lo frequency to upconvert to an r f frequency between 57 and 64 ghz. i ntegrated notch flters attenuate the lower mixing product at 40-46ghz. two r f amplifer stages provide gain to allow up to 11 dbm differential output from the i c to an integrated low profle antenna. the phase noise and quadrature balance of the h m c6000lp711 e is sufficient to carry up to 16q am modulation for high data rate operation.. there are no special power sequencing requirements for the h m c6000lp711 e ; all voltages are to be applied simultaneously. r egister a rray a ssignments and s erial i nterface the register arrays for both the transmitter and receiver are organized into 16 rows of 8 bits. using the serial interface, the arrays are written or read one row at a time as shown in figure 22 and figure 23, respectively. figure 22 shows the sequence of signals on the ena bl e , clk, and d a t a lines to write one 8-bit row of the register array. the ena bl e line goes low, the frst of 18 data bits (bit 0) is placed on the d a t a line, and 2 ns or more after the d a t a line stabilizes, the clk line goes high to clock in data bit 0. the d a t a line should remain stable for at least 2 ns after the rising edge of clk. the tx i c will support a serial interface running up to several hundred m hz, and the interface is 1.2 v c m o s levels. a write operation requires 18 data bits and 18 clock pulses, as shown in figure 23. the 18 data bits contain the 8-bit register array row data (l s b is clocked in frst), followed by the register array row address ( r ow0 through r ow15, 000000 to 001111, l s b frst), the r ead/write bit (set to 1 to write), and fnally the tx chip address 110, l s b frst). note that the register array row address is 6 bits, but only four are used to designate 16 rows, the two msbs are 0. a fter the 18th clock pulse of the write operation, the ena bl e line returns high to load the register array on the i c; prior to the rising edge of the ena bl e line, no data is written to the array. the clk line should have stabilized in the low state at least 2 ns prior to the rising edge of the ena bl e line. figure 22. timing diagram for writing a row of the transmitter serial interface for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 13 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz figure 23. timing diagram for reading a row of the transmitter serial interface t able 8. t ransmitter r egister a rray a ssignments r egister a rray r ow & bit i nternal s ignal n ame s ignal function row0 r ow0<7> pa_pwrdn a ctive high to power down most other p a circuits not controlled by r ow0<6> r ow0<6> pa_pwrdn_fast a ctive high to power down the p a core in < 1 s r ow0<5> upmixer_pwrdn a ctive high to power down i f to r f upmixer r ow0<4> divider_pwrdn a ctive high to power down local oscillator divider r ow0<3> if_bgmux_pwrdn a ctive high to power down one of three on-chip bandgap refs ( i f) and associated mux r ow0<2> if_upmixer_pwrdn a ctive high to power down baseband to i f upmixer r ow0<1> driver_pwrdn a ctive high to power down p a predriver r ow0<0> ifvga_pwrdn a ctive high to power down i f variable gain amplifer row1 r ow1<7> ipc_pwrdn a ctive high to power down on chip current reference generator r ow1<6> tripler_pwrdn a ctive high to power down frequency tripler r ow1<5> ifvga_q_cntrl<2> these bits control the q of the i f flter in the baseband to i f upmixer; r ow1<5:3> = 000 for highest q and highest gain. to reduce q and widen bandwidth, increment r ow1<5:3> in the sequence 001 100 101 111 r ow1<4> ifvga_q_cntrl<1> r ow1<3> ifvga_q_cntrl<0> r ow1<2> not used r ow1<2:0> = xxx - not used r ow1<1> not used r ow1<0> not used for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 14 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 8. t ransmitter r egister a rray a ssignments r egister a rray r ow & bit i nternal s ignal n ame s ignal function row2 r ow2<7> fd b<11> factory diagnostics; r ow2<7:4> = 1111 for normal operation r ow2<6> fdb<10> r ow2<5> fdb<9> r ow2<4> fdb<8> r ow2<3> pa_sel_vgbs<3> controls the regulator for the base voltage of the p a output transistors; r ow2<3:0> = 0000 for normal operation r ow2<2> pa_sel_vgbs<2> r ow2<1> pa_sel_vgbs<1> r ow2<0> pa_sel_vgbs<0> row3 r ow3<7> fdb<7> factory diagnostics; r ow4<7:4> = 0001 for normal operation r ow3<6> fdb<6> r ow3<5> fdb<5> r ow3<4> fdb<4> r ow3<3> fdb<3> factory diagnostics; r ow4<3:0> = 1111 for normal operation r ow3<2> fdb<2> r ow3<1> fdb<1> r ow3<0> fdb<0> row4 r ow4<7> pa_sel_vref<3> controls the bias current for the p a output transistors; r ow4<7:4> = 0011 for normal operation r ow4<6> pa_sel_vref<2> r ow4<5> pa_sel_vref<1> r ow4<4> pa_sel_vref<0> r ow4<3> driver_bias<2> controls the bias current for the p a predriver; r ow4<3:1> = 111 for normal operation r ow4<2> driver_bias<1> r ow4<1> driver_bias<0> r ow4<0> driver_bias2<2> controls the bias current for the p a predriver2; r ow4<0> = 1 for normal operation row5 r ow5<7> not used r ow5<7:4> = x - not used r ow5<6> not used r ow5<5> not used r ow5<4> not used r ow5<3> bg_monitor_sel these bits are for reserved for diagnostic purposes; r ow5<3:2> = 01 for normal operation r ow5<2> if_refsel r ow5<1> enable_fm a ctive high to enable the f s k/ ms k modulator inputs. r ow5<1> = 0 for normal i /q operation r ow5<0> not used r ow5<0> = x - not used row6 r ow6<7> ifvga_bias<3> controls the bias current of the i f variable gain amplifer; r ow6<7:4> = 1000 for normal operation r ow6<6> ifvga_bias<2> r ow6<5> ifvga_bias<1> r ow6<4> ifvga_bias<0> for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 15 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 8. t ransmitter r egister a rray a ssignments r egister a rray r ow & bit i nternal s ignal n ame s ignal function r ow6<3> ifvga_tune<3> controls the tuning of the i f flter for the variable gain amplifer; r ow6<3:0> = 1111 for normal operation r ow6<2> ifvga_tune<2> r ow6<1> ifvga_tune<1> r ow6<0> ifvga_tune<0> row7 r ow 7<7> ifvga_vga_adj<3> i f variable gain amplifer gain control bits; r ow 7<7:4> = 0000 is highest gain 1101 is lowest gain a ttenuation is 1.3 db / step, 17 db maximum r ow 7<6> ifvga_vga_adj<2> r ow 7<5> ifvga_vga_adj<1> r ow 7<4> ifvga_vga_adj<0> r ow7<3> if_upmixer_tune<3> controls the tuning of the i f flter for the i f to r f upmixer; r ow7<3:0> = 1111 for normal operation r ow 7<2> if_upmixer_tune<2> r ow 7<1> if_upmixer_tune<1> r ow7<0> if_upmixer_tune<0> row8 r ow8<7> tripler_bias<13> these bits control the biasing of the frequency tripler; r ow8<7:0> = 10111111 for normal operation r ow8<6> tripler_bias<12> r ow8<5> tripler_bias<11> r ow8<4> tripler_bias<10> r ow8<3> tripler_bias<9> r ow8<2> tripler_bias<8> r ow8<1> tripler_bias<7> r ow8<0> tripler_bias<6> row9 r ow9<7> tripler_bias<5> these bits control the biasing of the frequency tripler; r ow9<7:2> = 011011 for normal operation r ow9<6> tripler_bias<4> r ow9<5> tripler_bias<3> r ow9<4> tripler_bias<2> r ow9<3> tripler_bias<1> r ow9<2> tripler_bias<0> r ow9<1> driver_bias2<1> controls the bias current for the p a predriver2; r ow9<1:0> = 11 for normal operation r ow9<0> driver_bias2<0> row10 r ow10<7> r da c in <5> v co amplitude adjustment d a c; r ow10<7:2> = 111100 for normal operation r ow10<6> r da c in <4> r ow10<5> r d a c in <3> r ow10<4> r d a c in <2> r ow10<3> r d a c in <1> r ow10<2> r d a c in <0> r ow10<1> s y nrese t r ow10<1> = 0 for normal operation for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 16 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 8. t ransmitter r egister a rray a ssignments r egister a rray r ow & bit i nternal s ignal n ame s ignal function r ow10<0> d ivra t i o<4> r ow10<0> control the synthesizer divider ratio and output frequency. r efer to tables 9 and 10 for synthesizer control details. row11 r ow11<7> d ivra t i o<3> r ow11<7:4> control the synthesizer divider ratio and output frequency. r efer to tables 9 and 10 for synthesizer control details. r ow11< 6> d ivra t i o<2> r ow11<5> d ivra t i o<1> r ow11<4> d ivra t i o<0> r ow11<3> b an d<2> r ow11<3:1> control the v co band, and must be changed when tuning the synthesizer output frequency. r efer to tables 9 and 10 for synthesizer control details. r ow11< 2> b an d<1> r ow11<1> b an d<0> r ow11<0> re f se ld iv these bits are for reserved for diagnostic purposes; r ow11<0> = 1 for normal operation row12 r ow12<7> cpb ias <2> these bits control the synthesizer charge pump bias. r ow12<7:5> = 010 for normal operation r ow12<6> cpb ias <1> r ow12<5> cpb ias <0> r ow12<4> vrse l<3> these bits control the width of the lock window for the synthesizer lock detector. r ow12<4:1> = 1111 specifes the widest lock window for normal operation r ow12<3> vrse l<2> r ow12<2> vrse l<1> r ow12<1> vrse l<0> r ow12<0> re f se lv co this bit is for reserved for diagnostic purposes; r ow12<0> = 1 for normal operation row13 r ow13<7> m ux re f these bit are reserved for diagnostic purposes; r ow13<7> = 1 for normal operation r ow13<6> d iv 4 r ow13<6> = 0 for normal operation r ow13<5> en dc a ctive high to enable dc coupling on synthesizer reference input; r ow13<5> = 0 for normal operation r ow13<4> ini this bit is for reserved for diagnostic purposes; r ow13<4> = 0 for normal operation r ow13<3> pdd iv 12 a ctive high to power down 1.2 v circuits in synthesizer divider r ow13<2> pdd iv 27 a ctive high to power down 2.7 v circuits in synthesizer divider r ow13<1> pdqp a ctive high to power down synthesizer charge pump r ow13<0> pd v co a ctive high to power down synthesizer v co row14 r ow14<7> pdc a l a ctive high to power down v co calibration comparators; r ow14<7> = 0 for normal operation r ow14<6> m uxout controls multiplexing of diagnostic bits, high to read r ow15<7:0> r ow14<6> = 1 for normal operation r ow14<5> pd a lc12 a ctive high to power down v co automatic level control ( a lc); r ow14<5> = 1 for normal operation r ow14<4> plo a d a ctive high to load external amplitude adjustment bits for v co r ow14<4> = 1 for normal operation for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 17 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 8. t ransmitter r egister a rray a ssignments r egister a rray r ow & bit i nternal s ignal n ame s ignal function r ow14<3> w i d e <1> control bits for v co a lc loop; r ow14<3:2> = 01 for normal operation r ow14<2> w i d e <0> r ow14<1> s l e w<1> controls slew rate in sub-integer n divider r ow14<1:0> = 10 for normal operation r ow14<0> s l e w<0> row15 r ow15<7> co m pp r ead only bits to indicate synthesizer lock: r ow15<7:6> = 01 indicates that the v co control voltage is within the lock window and the synthe - sizer is locked. 11 indicates the v co control voltage above lock window 00 below lock window 10 is a disallowed state indicating an error r ow15<6> co m pn r ow15<5> r da c ms b<2> these bits are read only and reserved for factory diagnostic purposes. r ow15<4> r d a c ms b<1> r ow15<3> r d a c ms b<0> r ow15<2> r d a c m ux<0> these bits are read only and reserved for factory diagnostic purposes. r ow15<1> r d a c m ux<1> r ow15<0> r d a c m ux<2> s ynthesizer s ettings t able 9. ieee channels using 308.5714 mhz r eference frequency (ghz) divider s etting typical band s etting 57. 24 10101 001 57.78 10100 001 58.32 ( ieee ch 1) 10 011 010 58.86 10010 010 59.40 10001 011 59.94 10000 011 60.48 ( ieee ch 2) 11111 100 61.02 00000 100 61.56 00001 101 62.10 00010 101 62.64 ( ieee ch 3) 00011 110 63.18 00100 110 63.72 00101 111 divide ratio settings consist of registers row10 bit <0> (msb) and row11 bits <4:7> (4 lsbs) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com
mmwave transmi tt er - sm t 18 HMC6000LP711E v 0 0.1112 milli m eterwave t rans m itter 57 - 64 ghz t able 10. 500 mhz channels using 285.7143 mhz r eference frequency (ghz) divider s etting typical band s etting 57 00001 000 57. 5 00010 000 58 00011 001 58.5 00100 001 59 00101 010 59.5 0 0110 010 60 0 0111 011 60.5 01000 011 61 01001 100 61.5 01010 100 62 01011 101 62.5 0110 0 101 63 01101 110 63.5 01110 110 64 01111 111 divide ratio settings consist of registers row10 bit <0> (msb) and row11 bits <4:7> (4 lsbs) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or txrx@hittite.com

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